By Ivan A. Parinov
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Additional resources for Advanced Nano- and Piezoelectric Materials and Their Applications
The obtained results are depicted in Figure 14 (for n-type SiC MOS) and Figure 15 (for р-type SiC MOS) under lack of light. In reference , the studies were carried out of the dielectric power temporal stability of the MOS capacitors incorporated on the n-type 6Н-SiC wafers. The 25 nm thick oxide was grown at the temperature of 1150 C in the atmosphere of wet oxygen. In the samples under study, the break was observed at 145, 240 and 305 C. It is appeared that the studied samples remain to be stable under temperatures as high as 150 C.
The oxide thickness is a function of temperature and oxidation time. It was determined that in oxidizing in wet oxygen, the activation energy of linear component of the oxidation rate for (000 1 ) 6H-SiC is equal to 26 kkal/mole and activation energy of parabolic component of the oxidation rate is 48 kkal/mole. By oxidizing in wet oxygen at temperatures from 980 C up to 1245 C, the activation energy Ea of oxidation process equals 85 and 47 kkal/mole, respectively . The main problem arising during the SiC oxidation is the presence of carbon in the oxide being part of the metal-oxide-semiconductor structures.
We may assume that m n. If m = 1 then Equation (11) transforms into Henry law. (5) The electron flux Fe into oxide. Electron concentration in SiO2 is ascertained by the ratio: n0x = (nf + nt)G , where G is the function, which takes account the oxidation conditions and the state interface; nf, nt are the concentrations of photo- and thermally stimulated electrons in the conduction band of silicon. In the oxidation process, three stages of dielectric growth should be observed: (i) extremely thin oxide layer at the moment when the dissociation of molecular oxygen proceeds on the surface of growing silicon dioxide (x = x0); (ii) the average thickness oxide (x > x0); (iii) extremely thick oxide layer, if x >> x0; in this case value of x0 could be neglected, assuming that the dissociation of the oxidant occurs at the Si SiO2 interface.
Advanced Nano- and Piezoelectric Materials and Their Applications by Ivan A. Parinov