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By Ivan A. Parinov

ISBN-10: 1633212394

ISBN-13: 9781633212398

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The obtained results are depicted in Figure 14 (for n-type SiC MOS) and Figure 15 (for р-type SiC MOS) under lack of light. In reference [56], the studies were carried out of the dielectric power temporal stability of the MOS capacitors incorporated on the n-type 6Н-SiC wafers. The 25 nm thick oxide was grown at the temperature of 1150 C in the atmosphere of wet oxygen. In the samples under study, the break was observed at 145, 240 and 305 C. It is appeared that the studied samples remain to be stable under temperatures as high as 150 C.

The oxide thickness is a function of temperature and oxidation time. It was determined that in oxidizing in wet oxygen, the activation energy of linear component of the oxidation rate for (000 1 ) 6H-SiC is equal to 26 kkal/mole and activation energy of parabolic component of the oxidation rate is 48 kkal/mole. By oxidizing in wet oxygen at temperatures from 980 C up to 1245 C, the activation energy Ea of oxidation process equals 85 and 47 kkal/mole, respectively [51]. The main problem arising during the SiC oxidation is the presence of carbon in the oxide being part of the metal-oxide-semiconductor structures.

We may assume that m  n. If m = 1 then Equation (11) transforms into Henry law. (5) The electron flux Fe into oxide. Electron concentration in SiO2 is ascertained by the ratio: n0x = (nf + nt)G [43], where G is the function, which takes account the oxidation conditions and the state interface; nf, nt are the concentrations of photo- and thermally stimulated electrons in the conduction band of silicon. In the oxidation process, three stages of dielectric growth should be observed: (i) extremely thin oxide layer at the moment when the dissociation of molecular oxygen proceeds on the surface of growing silicon dioxide (x = x0); (ii) the average thickness oxide (x > x0); (iii) extremely thick oxide layer, if x >> x0; in this case value of x0 could be neglected, assuming that the dissociation of the oxidant occurs at the Si  SiO2 interface.

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Advanced Nano- and Piezoelectric Materials and Their Applications by Ivan A. Parinov

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